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InsemMar 20252019 patternFE

Basic Electronics Engineering (BXE) SPPU Insem Question Paper Mar 2025

All 4 questions from this SPPU insem paper, as printed. Read them here or open the PDF.

Open the PDFMost repeated BXE questions
Subject code
104010
Pattern
2019 pattern
Exam
Insem
Session
Mar 2025
Max. marks
30
Time
1 Hour
Semester
II
Paper code
[6408]-105

Printed for: F.E. (Insem)

Instructions to the candidates

  1. Answer Q.1 or Q.2, Q.3 or Q.4.
  2. Neat diagrams must be drawn wherever necessary.
  3. Figures to the right indicate full marks.
  4. Assume suitable data if necessary.

Questions

  1. Q1

    1. a)

      Explain drift current & diffusion current in semiconductor.

      Also asked:Mar 2024

      [5]
    2. b)

      For full wave bridge rectifier applied input voltage is 4sin  t. Calculate average output voltage, RMS voltage & PIV rating of the diode used.

      Also asked:Mar 2026 ·Sep 2024

      [5]
    3. c)

      Which diode can be used as Light Source. Draw it’s symbol. In which bias it will be operated? List any two applications for the same other than the Light Source.

      [5]

  2. Q2

    1. a)

      Differentiate between Active & Passive components.

      Also asked:Mar 2026 ·Feb 2026 ·Oct 2025 ·Apr 2025 ·Nov 2024 ·Mar 2024 ·Oct 2023

      [5]
    2. b)

      Determine the current through zener diode for the circuit shown in figure is : (Given : zener diode break down voltage Vz = 5.6V).

      [5]
    3. c)

      Draw the circuit diagram of center tap rectifier and explain its operation with suitable waveforms. 2

      Also asked:Mar 2026

      [5]

  3. Q3

    1. a)

      This part has equations that don’t show as text. Open the PDF to read it.

      [5]
    2. b)

      For N Channel E MOSFET i) Draw the drain characteristics and mark the various operating regions. ii) Draw the transfer characteristics and define threshold voltage V th .

      Also asked:Mar 2026

      [5]
    3. c)

      Draw the circuit diagram of i) Non-inverting amplifier and write the expression for Vo. ii) Voltage follower and write the expression for Vo.

      Also asked:Mar 2026

      [5]

  4. Q4

    1. a)

      What is the application of BJT in active region. Explain with suitable diagram function of each component.

      [5]
    2. b)

      Explain construction of N channel E MOSFET with suitable diagram and draw its symbol.

      Also asked:Mar 2026 ·Feb 2026 ·Oct 2025 ·Apr 2025 ·Nov 2024 ·Sep 2024 ·Mar 2024 ·Oct 2023 ·Oct 2022

      [5]
    3. c)

      This part has equations that don’t show as text. Open the PDF to read it.

      [5]